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| SUM85N03-07P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.007 @ VGS = 10 V 0.010 @ VGS = 4.5 V ID (A) 85 71 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency New Package with Low Thermal Resistance APPLICATIONS D Buck Converter - High Side - Low Side D Synchronous Rectifier - Secondary Rectifier D TO-263 G G DS S N-Channel MOSFET Top View SUM85N03-07P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 85 60 200 45 101 93b 3.75 - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mountc Junction-to-Ambient J ti t A bi t Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 72036 S-03919--Rev. A, 19-May-03 www.vishay.com Free Air RthJA RthJC Symbol Limit 40 62.5 1.6 Unit _C/W C/W 1 SUM85N03-07P Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 24 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125_C Drain-Source On-State Drain Source On State Resistancea rDS(on) VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 20 A 20 0.0077 120 0.0054 0.007 0.010 0.012 0.010 S W 30 V 1 3.0 "100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-Resistance Total Gate Chargeb Gate-Source Chargeb Gate-Drain Chargeb Turn-On Delay Timeb Rise Timeb Ciss Coss Crss RG Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W VDS = 15 V, VGS = 4.5V, ID = 50 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 2900 530 235 1.9 20 9 7 13 9 30 8 20 15 45 15 ns 30 nC W pF Turn-Off Delay Timeb Fall Timeb Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time IS ISM VSD trr IF = 30 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 35 85 200 1.5 70 A V ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72036 S-03919--Rev. A, 19-May-03 SUM85N03-07P New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 200 VGS = 10 thru 6 V 150 I D - Drain Current (A) 5V I D - Drain Current (A) 80 120 Vishay Siliconix Transfer Characteristics 100 100 4V 50 60 40 TC = 125_C 20 25_C - 55_C 0 2, 3 V 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 120 TC = - 55_C 25_C g fs - Transconductance (S) 80 125_C 60 r DS(on) - On-Resistance ( W ) 100 0.0125 0.0150 On-Resistance vs. Drain Current 0.0100 VGS = 4.5 V 0.0075 VGS = 10 V 0.0050 40 20 0.0025 0 0 20 40 60 80 100 0.0000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Capacitance 4000 3500 3000 2500 2000 1500 1000 500 0 0 6 12 18 24 30 Crss Coss Ciss 10 Gate Charge V GS - Gate-to-Source Voltage (V) 8 VDS = 15 V ID = 50 A C - Capacitance (pF) 6 4 2 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Document Number: 72036 S-03919--Rev. A, 19-May-03 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM85N03-07P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 20 A r DS(on) - On-Resistance (W) (Normalized) 1.6 I S - Source Current (A) TJ = 150_C TJ = 25_C 10 100 Source-Drain Diode Forward Voltage 1.2 0.8 0.4 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Drain-Source Voltage Breakdown vs. Junction Temperature 100 80 V (BR)DSS (V) 60 40 20 0 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72036 S-03919--Rev. A, 19-May-03 SUM85N03-07P New Product THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area, Junction-to-Case 40 VGS = 10 V ID = 20 A 38 100 I D - Drain Current (A) I D - Drain Current (A) 36 Limited by rDS(on) 1000 10 ms 100 ms 1 ms 10 10 ms 100 ms dc 1 TA = 25_C Single Pulse Vishay Siliconix 34 32 30 - 50 0.1 - 25 0 25 50 75 100 125 150 175 0.1 1 10 100 TC - Case Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) Document Number: 72036 S-03919--Rev. A, 19-May-03 www.vishay.com 5 |
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